Diodes D26V0H1U2LP20 - Manual (Page 2)

D26V0H1U2LP20
Document number: DS36767 Rev. 2 - 2
2 of 4
www.diodes.com
May 2014
© Diodes Incorporated
D26V0H1U2LP20
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P
PP
300 W 10/1000µs, Per Figure 1
Peak Pulse Current I
PP
9.5 A 10/1000µs, Per Figure 1
ESD Protection – Contact Discharge V
ESD_Contact
±30 kV IEC 61000-4-2 Standard
ESD Protection – Air Discharge V
ESD_Air
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
500 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
250 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V
RWM
— — 26 V —
Channel Leakage Current (Note 6) I
RM
— — 100 nA V
RWM
= 26V
Forward Voltage V
F
0.6 0.8 1.2 V I
R
= 10mA
Clamping Voltage V
CL
—  — 40 V I
PP
= 9.5A, t
p
= 10/1000μS
Breakdown Voltage V
BR
28 — 31.9 V I
R
= 1mA
Channel Input Capacitance C
T
— 630 — pF V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0 1 2 3
I
, PEA
K PUL
SE
CURREN
T
(
%
I
)
Pp
p
P
Peak Value I
pp
Half Value I /2
pp
10 X 1000 Waveform
as defined by R.E.A.
t
p
t, TIME (ms)
Figure 1 Pulse Waveform
0 120 160 200
200
40 80
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 2 Power Derating Curve
A
°
P
, P
O
WE
R
D
ISSI
P
A
T
IO
N (m
W
)
D
Note 5
300
400
600
500
700