Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes D12V0L1B2LP User Manual
Page 2
D12V0L1B2LP
Document number: DS36846 Rev. 2 - 2
2 of 5
June 2014
© Diodes Incorporated
D12V0L1B2LP
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
P
PP
100
W
8/20µs, Figure 3
Peak Pulse Current
I
PP
4
A
8/20µs, Figure 3
ESD Protection – Contact Discharge
V
ESD_Contact
±30
kV
IEC 61000-4-2 Standard
ESD Protection – Air Discharge
V
ESD_Air
±30
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
500
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
— — 12 V
—
Channel Leakage Current (Note 6)
I
RM
—
1 50 nA
V
RWM
= 12V
Clamping Voltage, IEC 61000-4-5
V
CL
—
— 20
V
I
PP
= 1A, tp = 8/20μS
—
— 25
I
PP
= 4A, tp = 8/20μS
Breakdown Voltage
V
BR
13 — — V
I
R
= 1mA
Channel Input Capacitance
C
T
—
10 13 pF
V
R
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
0
125
175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
, P
O
WE
R
DI
SSI
P
AT
IO
N (
m
W
)
D
25
100
50
75
150
25
75
125
250
175
Note 5
200
225
0
50
25
50
75
100 125
150
P
EAK
P
U
LS
E
D
E
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200