Bsp75g – Diodes BSP75G User Manual
Page 5
BSP75G
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static characteristics
Drain-source clamp voltage
V
DS(AZ)
60
70
75
V
I
D
=10mA
Off-state drain current
I
DSS
0.1
3
A
V
DS
=12V, V
IN
=0V
Off-state drain current
I
DSS
3
15
A
V
DS
=32V, V
IN
=0V
Input threshold voltage
(*)
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
V
IN(th)
1
2.1
V
V
DS
=V
GS
, I
D
=1mA
Input current
I
IN
0.7
1.2
mA
V
IN
=+5V
Input current
I
IN
1.5
2.7
mA
V
IN
=+7V
Input current
I
IN
4
7
mA
V
IN
=+10V
Static drain-source on-state
resistance
R
DS(on)
520
675
m
⍀
V
IN
=+5V, I
D
=0.7A
Static drain-source on-state
resistance
R
DS(on)
385
550
m
⍀
V
IN
=+10V, I
D
=0.7A
Current limit
(†)
(†) The drain current is limited to a reduced value when V
DS
exceeds a safe level.
I
D(LIM)
0.7
1.1
1.75
A
V
IN
=+5V, V
DS
>5V
Current limit
(†)
I
D(LIM)
2
3
4
A
V
IN
=+10V, V
DS
>5V
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)
t
on
2.2
10
s
R
L
=22
⍀, V
DD
=12V,
V
IN
=0 to +10V
Turn-off time (V
IN
to 90% I
D
)
t
off
13
20
s
R
L
=22
⍀, V
DD
=12V,
V
IN
=+10V to 0V
Slew rate on (70 to 50% V
DD
)
-dV
DS
/dt
on
10
20
V/
s R
L
=22
⍀, V
DD
=12V,
V
IN
=0 to +10V
Slew rate off (50 to 70% V
DD
)
dV
DS
/dt
off
3.2
10
V/
s R
L
=22
⍀, V
DD
=12V,
V
IN
=+10V to 0V
Protection functions
(‡)
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Required input voltage for
over temperature protection
V
PROT
4.5
V
Thermal overload trip
temperature
T
JT
150
175
°C
Thermal hysteresis
10
°C
Unclamped single pulse
inductive energy Tj=25
°C
E
AS
550
mJ
I
D(ISO)
=0.7A, V
DD
=32V
Unclamped single pulse
inductive energy Tj=150
°C
E
AS
200
mJ
I
D(ISO)
=0.7A, V
DD
=32V
Inverse diode
Source drain voltage
V
SD
1
V
IN
=0V, -I
D
=1.4A