Bss84v new prod uc t, Maximum ratings, Thermal characteristics – Diodes BSS84V User Manual
Page 2: Electrical characteristics, Bss84v
BSS84V
Document number: DS30605 Rev. 9 - 2
2 of 5
February 2013
© Diodes Incorporated
BSS84V
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-50
V
Drain-Gate Voltage (Note 5)
V
DGR
-50
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 6)
Continuous
I
D
-130
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
P
D
150
mW
Thermal Resistance, Junction to Ambient
R
θJA
833
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-50
-75
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
-1
-2
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= +25
C
V
DS
= -50V, V
GS
= 0V, T
J
= +125
C
V
DS
= -25V, V
GS
= 0V, T
J
= +25
C
Gate-Body Leakage
I
GSS
50
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.8
-1.6
-2.0
V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS (ON)
2
10
V
GS
= -5V, I
D
= -0.100A
Forward Transconductance
g
FS
0.05
S
V
DS
= -25V, I
D
= -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
45
pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
12
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50
, V
GS
= -10V
Turn-Off Delay Time
t
D(OFF)
18
ns
Notes:
5. R
GS
20K.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website
7. Short duration pulse test used to minimize self-heating effect.