Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes BSS84DW User Manual
Page 2: Bss84dw
BSS84DW
Document number: DS30204 Rev. 18 - 2
2 of 5
January 2014
© Diodes Incorporated
BSS84DW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-50 V
Drain-Gate Voltage (Note 5)
V
DGR
-50 V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 6)
Continuous
I
D
-130 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 6)
P
D
300 mW
Thermal Resistance, Junction to Ambient
R
θJA
417
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-50 -75
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
-1
-2
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= +25°C
V
DS
= -50V, V
GS
= 0V, T
J
= +125°C
V
DS
= -25V, V
GS
= 0V, T
J
= +25°C
Gate-Body Leakage
I
GSS
10
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.8 -1.6 -2.0 V V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS (ON)
6 10 Ω
V
GS
= -5V, I
D
= -0.100A
Forward Transconductance
g
FS
0.05
S
V
DS
= -25V, I
D
= -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
45 pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
25 pF
Reverse Transfer Capacitance
C
rss
12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50Ω, V
GS
= -10V
Turn-Off Delay Time
t
D(OFF)
18
ns
Notes: 5.
R
GS
20KΩ.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at7. Short duration pulse test used to minimize self-heating effect.