Diodes BSS123 - Manual (Page 2)

BSS123
Document number: DS30366 Rev. 18 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS123
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
100 V
Gate-Source Voltage Continuous V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous I
D
170
mA
Pulsed I DM
680
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Max Unit
Power Dissipation (Note 5) P D
300 mW
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R θJA 417 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV
DSS
100 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
— — 0.1 µA V
DS
= 100V, V
GS
= 0V
— — 10 nA

V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage , Forward I GSSF
— — 50 nA V GS = 20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V GS(th)
0.8 1.4 2.0 V V DS = V GS , I D = 1mA
Static Drain-Source On-Resistance R
DS (ON)
— — 6.0
Ω
V
GS
= 10V, I
D
= 0.17A
— — 10 V GS = 4.5V, I D = 0.17A
Forward Transfer Admittance g
FS
80 370 — mS V
DS
=10V, I
D
= 0.17A, f = 1.0KHz
Diode Forward Voltage V
SD
- 0.84 1.3 V V
GS
= 0V, I
S
= 0.34A,
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
— 29 60
pF V
DS
= 25V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
— 10 15
Reverse Transfer Capacitance C
rss
— 2 6
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(on)
— — 8 ns
V
GS
= 10V, V
DD
= 30V,
I
D
= 0.28A, R
GEN
= 50 Ω
Turn-On Rise Time t r
— — 8 ns
Turn-Off Delay Time t
D(off)
— — 13 ns
Turn-Off Fall Time t f
— — 16 ns
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.