Diodes BSS123 User Manual
Product summary, Description, Applications
BSS123
Document number: DS30366 Rev. 18 - 2
1 of 5
August 2013
© Diodes Incorporated
BSS123
ADVAN
CE I
N
F
O
RM
ATI
O
N
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
100V
6.0
Ω @ V
GS
= 10V
0.17
Description
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as:
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching
Applications
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number
Qualification Case
Packaging
BSS123-7-F
Commercial
SOT23
3,000 / Tape & Reel
BSS123Q-13
Automotive
SOT23
10,000 / Tape & Reel
BSS123Q-7
Automotive
SOT23
3,000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
2017
Code T U V W X Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Equivalent Circuit
Top View
Top View
SOT23
D
G
S
Source
Gate
Drain
K23 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site
Chengdu A/T Site
YM
Y
K23
YM
K23
YM
e3