Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes 2N7002E User Manual
Page 2
2N7002E
Document number: DS30376 Rev. 14 - 2
2 of 5
August 2013
© Diodes Incorporated
2N7002E
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
1.0M
V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
250
200
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
300
240
mA
Maximum Body Diode Forward Current (Note 6)
I
S
500 mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
800 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation
(Note 5)
P
D
370
mW
(Note 6)
540
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
348
°C/W
(Note 6)
241
Thermal Resistance, Junction to Case
(Note 6)
R
θJC
91
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 70
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
@ T
C
= +25°C
@ T
C
= +125°C
I
DSS
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
±10 nA
V
GS
= ±15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0
2.5 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
@ T
J
= +25°C
R
DS (ON)
1.6
2.0
3
4
Ω
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 200mA
On-State Drain Current
I
D(ON)
0.8 1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
22 50 pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
11 25 pF
Reverse Transfer Capacitance
C
rss
2.0 5.0 pF
Gate resistance
R
g
120
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
223
pC
V
DS
= 10V, I
D
= 250mA
Gate-Source Charge
Q
gs
82
pC
Gate-Drain Charge
Q
gd
178
pC
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
t
D(ON)
7.0 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150
Ω, V
GEN
= 10V, R
GEN
= 25
Ω
Turn-Off Delay Time
t
D(OFF)
11 20 ns
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.