Diodes 2N7002 60V SOT23 - Manual (Page 2)

2N7002
Issue 5 - October 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
NOTES:
(a) Measured under pulsed conditions. Pulse width
Յ300␮s; duty cycle Յ2%.
(b) Sample test.
(c) Switching times measured with 50
⍀ source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device.
Parameter Symbol Limit Unit
Drain-source voltage V
DS
60 V
Continuous drain current at T
amb
=25°C I
D
115 mA
Pulsed drain current I
DM
800 mA
Gate-source voltage V
GS
±40 V
Power dissipation at T
amb
=25°C P
tot
330 mW
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Parameter Symbol Min. Max. Unit Conditions
Drain-source breakdown voltage BV
DSS
60 V I
D
= 10
␮A, V
GS
=0V
Gate-source threshold voltage V
GS(th)
1 2.5 V I
D
= 250 ␮A, V
DS
=V
GS
Gate-body leakage I
GSS
10 nA V
GS
=±20V, V
DS
=0V
Zero gate voltage drain current I
DSS
1 ␮A V
DS
= 48V, V
GS
=0V
500
␮A
V
DS
= 48V, V
GS
=0V, T=125°C
On-state drain current (a) I
D(on)
500 mA V
DS
= 25V, V
GS
= 10V
Static drain-source on-state
voltage (a)
V
DS(on)
3.75 V V
GS
= 10V, I
D
= 500mA
375 mV V
GS
= 5V, I
D
= 50mA
Static drain-source on-state
resistance (a)
R
DS(on)
7.5 ⍀ V
GS
= 10V, I
D
= 500mA
7.5
⍀
V
GS
= 5V, I
D
= 50mA
Forward transconductance (a)(b) g
fs
80 mS V
DS
= 25V, I
D
= 500mA
Input capacitance (b) C
iss
50 pF
V
DS
= 25V, V
GS
=0V f=1MHz Common source output
capacitance
(b)
C
oss
25 pF
Reverse transfer capacitance (b) C
rss
5 pF
Turn-on time (b)(c) t
(on)
20 ns V
DD
≈30V, I
D
= 200mA,
R
g
=25
⍀, R
L
=150
⍀
Turn-off time (b)(c) t
(off)
20 ns