Diodes BCV47 - Manual (Page 3)

BCV47
Document number: DS33001 Rev. 4 - 2
3 of 5
www.diodes.com
December 2012
© Diodes Incorporated
BCV47
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
80 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
60 — — V I
CEO
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
10 — — V I
EBO
= 10µA
Collector cut-off current I
CBO
—
— <1
—
100
10
nA
µA V
CB
= 60V
V
CB
= 60V, T
A
= +150°C
Emitter-base Cut-off Current I
EBO
— <1 100 nA V
EB
= 4V
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio h
FE
2,000
4,000
10,000
2,000
— — —
I
C
= 100µA, V
CE
= 1V
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
Collector-Emitter Saturation Voltage V
CE(sat)
— — 1.0 V I
C
= 100mA, I
B
= 0.1mA
Base-Emitter Saturation Voltage V
BE(sat)
— — 1.5 V I
C
= 100mA, I
B
= 0.1mA
SMALL SIGNAL CHARACTERISTICS (Note 9)
Transition Frequency f
T
— 170 — MHz
I
C
= 50mA, V
CE
= 5V,
f = 20MHz
Output Capacitance C
obo
— 3.5 — pF V
CB
= 10V, f = 1MHz
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%