Diodes DCX4710H - Manual (Page 3)

Pre-Biased NPN Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
I
CBO
⎯ ⎯ 100 nA V
CB
= 50V, I
E
= 0
Collector-Base Breakdown Voltage V
(BR)CBO
50 ⎯ ⎯ V I
C
= 10 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
50 ⎯ ⎯ V I
C
= 2mA, I
B
= 0
B
V
I(OFF)
⎯ 1.2 0.5 V V
CE
= 5V, I
C
= 100 μA Input Off Voltage
I
O(OFF)
⎯ ⎯ 0.5 μA
V
CC
= 50V, V
I
= 0V Output Current
ON CHARACTERISTICS
h
FE
35 ⎯ ⎯ ⎯
V
CE
= 5V, I
C
= 5mA DC Current Gain
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ 0.25 V I
C
= -10mA, I
B
= -0.3mA
B
V
O(ON)
⎯ 0.1 0.3 V I
O
/I
I
= 10mA/0.5mA Output On Voltage
Input On Voltage V
I(ON)
3 1.6 ⎯ V V
O
= 0.3V, I
C
= 2mA
Input Current I
I
⎯ ⎯ 0.88 mA V
I
= 5V
Input Resistor +/- 30% (Base) R1 7 10 13 K
Ω ⎯
(R2/R1) 0.8 1 1.2 ⎯ ⎯ Resistor Ratio
SMALL SIGNAL CHARACTERISTICS
f
T
⎯ 250 ⎯ MHz
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
Transition Frequency (Gain bandwidth product)
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
Typical Characteristics
@T
amb
= 25°C unless otherwise specified
P
, P
O
W
E
R
DISSI
P
A
T
ION (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve (Note 3)
A
0
0
Notes: 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30871 Rev. 6 - 2 3 of 7
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DCX4710H
© Diodes Incorporated