Diodes DCX4710H - Manual (Page 2)

DS30871 Rev. 6 - 2 2 of 7
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DCX4710H
© Diodes Incorporated
Sub-Component Device – Pre-Biased PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-50 V
Supply Voltage V
CC
-50 V
Input Voltage V
IN
+6 to -40 V
Output Current (dc) I
C(max)
-100 mA
Sub-Component Device – Pre-Biased NPN Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
50 V
Supply Voltage V
CC
50 V
Input Voltage V
IN
-10 to +40 V
Output Current (dc) I
C(max)
100 mA
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
I
CBO
⎯ ⎯ -100 nA V
CB
= -50V, I
E
= 0
Collector-Base Breakdown Voltage V
(BR)CBO
-50 ⎯ V I
C
= -10 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-50 ⎯ V I
C
= -4mA, I
B
= 0
B
Input Off Voltage V
I(OFF)
⎯ ⎯ -0.3 V V
CE
= -5V, I
C
= -100
μA
Output Off Current I
O(OFF)
⎯ ⎯ -0.5 μA
V
CC
= -50V, V
I
= 0V
ON CHARACTERISTICS
DC Current Gain
h
FE
80 ⎯ ⎯ ⎯
V
CE
= -5V, I
C
= -5mA
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ -0.25 V I
C
= -10mA, I
B
= -0.3mA
B
Output On Voltage V
O(ON)
⎯ -0.1 -0.3 V I
O
/I
I
= -10mA/-0.5mA
Input On Voltage (Load is present) V
I(ON)
-1.4 -0.9 ⎯ V V
O
= -0.3V, I
C
= -2mA
Input Current I
I
⎯ ⎯ -0.88 mA V
I
= -5V
Input Resistor +/- 30% (Base) ΔR1 7 10 13 K
Ω ⎯
Pull-up Resistor (Base to Vcc supply) R2 32 47 62 K
Ω ⎯
Resistor Ratio Δ(R2/R1) 20 ⎯ 20 % ⎯
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (gain bandwidth product) f
T
⎯ 250 ⎯ MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02