Sub-component device - pre-biased npn transistor, Typical characteristics – Diodes DCX100NS User Manual
Page 2
DS30761 Rev. 6 - 2
2 of 6
DCX100NS
© Diodes Incorporated
Sub-Component Device - Pre-Biased NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Supply Voltage
V
cc
50
V
Input Voltage
V
in
-10 to +40
V
Output Current
I
O
50
mA
Electrical Characteristics: Pre-Biased PNP Transistor
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ Max
Unit
Test
Condition
Input Voltage
V
I(off)
-0.3
⎯
⎯
V
V
CC
= -5V, I
O
= -100uA
V
I(on)
⎯
⎯
-3.0 V
V
O
= -0.3V, I
O
= -20mA
Output Voltage
V
O(on)
⎯
0.1 -0.3 V
I
O
/I
I
= -10mA /-0.5mA
Input Current
I
I
⎯
⎯
-7.2 mA
V
I
= -5V
Output Current
I
O(off)
⎯
⎯
-0.5 uA
V
CC
= -50V, V
I
= 0V
DC Current Gain
G
I
33
⎯
⎯
⎯
V
O
= -5V, I
O
= -5mA
Input Resistor Tolerance
Δ R1
-30
⎯
+30 %
⎯
Resistance Ratio Tolerance
R2/R1
0.8
1
1.2
%
⎯
Gain-Bandwidth Product
f
T
⎯
250
⎯
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100 MHz
Electrical Characteristics: Pre-Biased NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min Typ Max Unit
Test
Condition
Input Voltage
V
I(off)
0.5 1.18
⎯
V
V
CC
= 5V, I
O
= 100uA
V
I(on)
⎯
1.85 3 V
V
O
= 0.3V, I
O
= 10mA
Output Voltage
V
O(on)
⎯
0.1 0.3 V
I
O
/I
I
= 10mA / 0.5mA
Input Current
I
I
⎯
⎯
0.88 mA
V
I
= 5V
Output Current
I
O(off)
⎯
⎯
0.5 uA
V
CC
= 50V, V
I
= 0V
DC Current Gain
G
I
30
⎯
⎯
⎯
V
O
= 5V, I
O
= 5mA
Input Resistor Tolerance
ΔR1
-30
⎯
+30 %
⎯
Resistor Ratio Tolerance
R2/R1
0.8
1
1.2
⎯
⎯
Gain-Bandwidth Product
f
T
⎯
250
⎯
MHz
V
CE
= 10V, I
E
= 5mA,
f = 100 MHz
Typical Characteristics
@T
A
= 25°C unless otherwise specified
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve (Total Device)
A
°
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N
(mW
)
D