Bfs17n new prod uc t, Electrical characteristics – Diodes BFS17N User Manual
Page 4
BFS17N
Document Number DS32160 Rev. 3 - 2
4 of 7
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
BFS17N
NEW PROD
UC
T
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
20
−
−
V
I
C
= 10µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
11
−
−
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
3
−
−
V
I
E
= 10µA
Collector Cutoff Current
I
CBO
−
−
0.5 µA
V
CB
= 10V
Emitter Cutoff Current
I
EBO
−
−
0.5 µA
V
EB
= 2V
Static Forward Current Transfer Ratio (Note 10)
h
FE
56
−
180
−
I
C
= 5mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
−
−
0.5 V
I
C
= 25mA, I
B
= 5mA
Transition Frequency (Note 10)
f
T
1.4 3.2
−
GHz
I
E
= 25mA, V
CE
= 5V,
f = 500MHz
Collector Output Capacitance (Note 10)
C
ob
−
0.8 1.5 pF
V
CB
= 10V, f = 1MHz
Notes:
10. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%