Diodes BFS17N - Manual (Page 2)

BFS17N
Document Number DS32160 Rev. 3 - 2
2 of 7
www.diodes.com
October 2012
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A Product Line of
Diodes Incorporated
BFS17N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
20 V
Collector-Emitter Voltage V CEO
11 V
Emitter-Base Voltage V
EBO
3 V
Continuous Collector Current I
C
50 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
310
mW
(Note 7) 350
Thermal Resistance, Junction to Ambient
(Note 6)
R θJA
403
°C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) R θJL 350 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 2
Electrostatic Discharge - Machine Model ESD MM 100 V A
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition;
7. Same as Note 6, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.