Electrical characteristics, Bc846blp4 – Diodes BC846BLP4 User Manual
Page 4
BC846BLP4
Document number: DS35751 Rev. 2 - 2
4 of 7
July 2012
© Diodes Incorporated
BC846BLP4
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
80
⎯
⎯
V
I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
65
⎯
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6
⎯
⎯
V
I
E
= 100µA, I
C
= 0
Collector Cutoff Current
I
CES
⎯
⎯
15 nA
V
CE
= 65V
Collector Cutoff Current
I
CBO
⎯
⎯
15
5.0
nA
µA
V
CB
= 40V
V
CB
= 30V, T
A
= +150°C
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
200 270 450
⎯
V
CE
= 5V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
90
220
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
720
870
900
⎯
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage
V
BE(on)
580
⎯
650
⎯
700
770
mV
V
CE
= 5V, I
C
= 2.0mA
V
CE
= 5V, I
C
= 10mA
SMALL SIGNAL CHARACTERISTICS (Note 9)
Input Capacitance
C
ibo
⎯
6.7
⎯
pF
V
CB
= 5V, f = 1.0MHz
Output Capacitance
C
obo
⎯
1.76
⎯
pF
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
100 300
⎯
MHz
V
CE
= 5V, I
C
= 10mA, f = 100MHz
Noise Figure
NF
⎯
2
10 dB
V
CE
= 5V, I
C
= 200µA, R
S
= 2.0k
Ω,
f = 1.0kHz,
Δf = 200Hz
Delay time
t
d
⎯
11.2
⎯
ns
V
CC
= 30V,
I
C
= 150mA,
I
B1
= I
B2
= 15mA
Rise time
t
r
⎯
59.7
⎯
ns
Storage time
t
s
⎯
190.8
⎯
ns
Fall time
t
f
⎯
108.6
⎯
ns
Note:
9. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle
≤ 2%.