Diodes BC846BLP4 - Manual (Page 2)

BC846BLP4
Document number: DS35751 Rev. 2 - 2
2 of 7
www.diodes.com
July 2012
© Diodes Incorporated
BC846BLP4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
65 V
Emitter-Base Voltage V
EBO
6 V
Collector Current - Continuous I C
100 mA
Peak Collector Current I
CM
200 mA
Peak Emitter Current I
EM
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
0.46
W
(Note 6) 1
Thermal Resistance, Junction to Ambient
(Note 5)
R θJA
272
°C/W
(Note 6) 120
Thermal Resistance, Junction to Leads (Note 7) R θJL 110 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.