Bc857bfa, Electrical characteristics, Bc857fa – Diodes BC857BFA User Manual
Page 3
BC857FA
Document number: DS36018 Rev. 1 - 2
3 of 6
July 2013
© Diodes Incorporated
BC857BFA
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-50 -100
V
I
C
= -50µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CES
-50 -90
I
C
= -50µA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
-45 -65
V
I
C
= -1mA, I
B
= 0
Collector-Base Breakdown Voltage
BV
EBO
-6.0 -8.5
V
I
E
= -50µA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
-15 nA
V
CB
= -40V
Collector-Emitter Cutoff Current
I
CES
-15 nA
V
CE
= -40V
ON CHARACTERISTICS (Note 8)
DC Current Gain
h
FE
100
200
340
330
470
I
C
= -10µA, V
CE
= -5.0V
I
C
= -2.0mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage
V
CE(sat)
-70
-300
-175
-500
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
-760
-885
-1000
-1100
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage
V
BE(on)
-600
-670
-715
-780
-850
mV
I
C
= -2.0mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
2.0
pF
V
CB
= -10.0V, f = 1.0MHz, I
E
= 0
Current Gain-Bandwidth Product
f
T
100 340
MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Note:
8. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%.