Diodes BC856A-BC858C - Manual (Page 2)

BC856A – BC858C
Document Number: DS11207 Rev. 23 - 2
2 of 7
www.diodes.com
December 2013
© Diodes Incorporated
BC856A-BC858C
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
BC856
V
CBO
-80
V BC857 -50
BC858 -30
Collector-Emitter Voltage
BC856
V
CEO
-65
V BC857 -45
BC858 -30
Emitter-Base Voltage V
EBO
-5.0 V
Continuous Collector Current I
C
-100 mA
Peak Collector Current I
CM
-200 mA
Peak Emitter Current I
EM
-200 mA
Peak Base Current I
BM
-200 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
310
mW
(Note 7) 350
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
403
°C/W 
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) R
θJL
350 °C/W 
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.