Diodes BC847BVN - Manual (Page 4)

BC847BVN
Document number: DS30627 Rev. 6 - 2
4 of 6
www.diodes.com
May 2013
© Diodes Incorporated
BC847BVN
Electrical Characteristics: PNP, BC857B Type (Q
2
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-50 — — V I
C
= -100µA, I
B
= 0
Collector-Emitter Breakdown Voltage BV
CEO
-45 — — V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
-6 — — V I
E
= -100µA, I
C
= 0
DC Current Gain h
FE
220 290 475 — V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage V
CE(sat)
—
-75
-250
-300
-650
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(sat)
—
-700
-850 —
-950
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage V
BE(on)
-600
—
-650
—
-750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current I
CBO
—
— —
— -15
-4.0
nA
µA V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
Gain Bandwidth Product f
T
100 200 — MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance C
CBO
— 3 4.5 pF V
CB
= -10V, f = 1.0MHz
Note: 8. Short duration pulse test used to minimize self-heating effect.
-1
-10
-100
-1,000
-1 -10 -100 -1,000
h
, D
C
CURRENT
GA
IN
FE
I , COLLECTOR CURRENT (mA)
Figure 6. Typical DC Current Gain vs. Collector Current
(BC857B Type)
C
-1 -0.1 -10 -100 -1,000
V,
C
O
LL
E
C
T
O
R
-E
M
IT
T
E
R
SA
TURA
TI
O
N
VO
LT
AG
E
(
V
)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Figure 7. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC857B Type)
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
-0.1
-0.2
-0.3
-0.4
-0.5
I
C
I
B
= 10
6
10
Cibo
Cobo
C
A
P
A
C
IT
A
N
C
E (
p
F
)
V , REVERSE VOLTAGE (V)
Figure 8. Typical Capacitance Characteristics (BC857B Type)
R
f = 1MHz
-10
-100
-1,000
-1 -10 -100
f,
G
AI
N
-BANDW
ID
T
H
P
R
O
D
U
C
T
(M
H
z)
t
I , COLLECTOR CURRENT (mA)
Figure 9. Typical Gain-Bandwidth Product
vs. Collector Current (BC857B Type)
C