Diodes BC847BVN - Manual (Page 3)

BC847BVN
Document number: DS30627 Rev. 6 - 2
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated
BC847BVN
Electrical Characteristics: NPN, BC847B Type (Q
1
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 — — V I
C
= 100µA, I
B
= 0
Collector-Emitter Breakdown Voltage BV
CEO
45 — — V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
6 — — V I
E
= 100µA, I
C
= 0
DC Current Gain h
FE
200 290 450 — V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage V
CE(sat)
—
90
200
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V
BE(sat)
—
700
900
— mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage V
BE(on)
580
—
660
—
700
720
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Cutoff Current I
CBO
—
— —
— 15
5.0
nA
µA V
CB
= 30V
V
CB
= 30V, T
A
= +150°C
Gain Bandwidth Product f
T
100 300 — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance C
CBO
— 3.5 6.0 pF V
CB
= 10V, f = 1.0MHz
Note: 7. Short duration pulse test used to minimize self-heating effect.
1
10
100
1,000
1.0 10 100 0.1 0.01
h D
C
C
U
R
R
E
N
T
G
AI
N
FE
,
I , COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain vs. Collector Current
(BC847B Type)
C
0
0.1
0.2
0.3
0.4
0.5
0.1 1.0 10 100
V,
C
O
LL
E
C
T
O
R
-E
MI
T
T
E
R
S
A
T
U
R
A
TI
O
N
VO
LT
AG
E
(
V
)
CE
I , COLLECTOR CURRENT (mA)
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC847B Type)
C
I
I = 20
C
B
T = 100 C
A
°
T = 25 C
A
°
T = -50 C
A
°
6
10
C
A
P
A
CIT
A
NCE
(
p
F
)
V , REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance Characteristics (BC847B Type)
R
C
obo
C
ibo
f = 1MHz
10
100
1,000
0.1 1.0 10 100
f,
G
AI
N-
BANDW
ID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Figure 5. Typical Gain-Bandwidth Product
vs. Collector Current (BC847B Type)
C
T = 25 C
A
°
V = 10V
CE
V =
CE
5V
V =
CE
2V