Maximum ratings, Thermal characteristics – Diodes 2DB1188P/Q/R User Manual
Page 2
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
2 of 7
February 2013
© Diodes Incorporated
2DB1188P/Q/R
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-32 V
Emitter-Base Voltage
V
EBO
-6 V
Continuous Collector Current
I
C
-2 A
Peak Pulse Collector Current
I
CM
-3 A
Base Current
I
B
-500 mA
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
125 °C/W
Thermal Resistance, Junction to Leads (Note 6)
R
θJL
19 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).