Diodes 2DB1714 - Manual (Page 3)

2DB1714
Document number: DS31610 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1714
NEW PROD
UC
T
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
-V
, BASE
-EM
IT
T
E
R
SA
T
U
R
A
T
IO
N
V
O
L
T
A
G
E (
V)
BE(
SA
T
)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 20
C B
/I
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 8 Typical Capacitance Characteristics
10
100
1,000
C
A
P
A
C
IT
A
N
C
E (
p
F
)
1
C
ibo
C
obo
f = 1MHz
0 10 20 30 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f,
G
AI
N
-B
A
N
DW
ID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = -2V
f = 100MHz
CE
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ESI
S
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 128°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5