Diodes 2DB1184Q - Manual (Page 2)

2DB1184Q
Document number: DS31504 Rev. 5 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
2DB1184Q
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-60 V
Collector-Emitter Voltage V
CEO
-50 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-3 A
Peak Pulse Collector Current I
CM
-4.5 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
1.2 W
Power Dissipation @T
L
= +25°C (Note 6) P
D
15 W
Thermal Resistance, Junction to Lead (Note 5) R
θJA
104 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R
θJL
8.3 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Note: 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)
1
Figure 1 Transient Thermal Response
0.001
0.01
0.1
1
r(t),
T
R
ANSI
E
N
T
T
H
E
R
MA
L
R
ESI
S
TAN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) *
θJA
R
R = 110°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9