Diodes BAV99DW - Manual (Page 2)

BAV99DW
Document number: DS30145 Rev. 15 - 2
2 of 4
www.diodes.com
November 2012
© Diodes Incorporated
BAV99DW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current (Note 6) I
FM
215 mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0
μs
I
FSM
2.0
A @ t = 1.0ms 1.0
@ t = 1.0s 0.5
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
200 mW
Power Dissipation (Note 7) P D
300 mW
Thermal Resistance Junction to Ambient Air (Note 6) R θJA 625 °C/W
Thermal Resistance Junction to Ambient Air (Note 7) R θJA 417 °C/W
Operating and Storage Temperature Range T J , T STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 8) V
(BR)R
75 ⎯ V I
R
= 2.5 μA
Forward Voltage V F
⎯ 0.715
V
I F = 1.0mA
⎯ 0.855 I
F
= 10mA
⎯ 1.0 I
F
= 50mA
⎯ 1.25 I F = 150mA
Reverse Current (Note 8) I
R
⎯ 2.5 μA
μA
μA
nA V
R
= 75V
⎯ 50 V
R
= 75V, T
J
= +150 °C
⎯ 30 V
R
= 25V, T
J
= +150 °C
⎯ 25 V
R
= 20V
Total Capacitance C
T
⎯ 2.0 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
7. Device mounted on Alumina PCB, 0.4 inch x 0.3 inch x 0.024 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
8. Short duration pulse test used to minimize self-heating effect.