Diodes BAV5004WS - Manual (Page 2)

BAV5004WS
Document number: DS30733 Rev. 3 - 2
2 of 4
www.diodes.com
August 2013
© Diodes Incorporated
BAV5004WS
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) (See figure 1) P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 5) R
θJA
625 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
400 – – V I
R
= 150µA
Forward Voltage V
F
–
–
– –
–
– 0.93
1.09
1.29
V
I
F
= 20mA
I
F
= 100mA
I
F
= 200mA
Reverse Current (Note 6) I
R
–
– –
– 1
100
μA
μA V
R
= 240V
V
R
= 240V, T
J
= +150°C
Total Capacitance C
T
– 0.9 2.5 pF V
R
= 0V, f = 1.0MHz
Reverse Recovery Time t
rr
– – 50 ns
I
F
= I
R
= 30mA,
I
rr
= 3.0mA, R
L
= 100Ω
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150
P
,
P
O
WE
R
DISS
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power Derating Curve
150
200
250
0
Note 5
1,000
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
0 0.2 0.4 0.6 0.8 1.0 1.4 1.2
100
10
1
0.1
0.01
0.001 I,
I
N
S
TA
N
TA
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
m
T = 25 C
J
°
T = 5 C
J
-5 °
T = 8 C
J
° 5
T = 12 C
J
° 5
T = 1 0 C
J
° 5
100,000
I,
I
N
S
TAN
TAN
E
O
U
S
R
EV
E
R
SE
C
U
R
R
EN
T
(n
A
)
R
10,000
1,000
100
10
1
0.1
0 50 100 150 200 250 300 350 400
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
R
T = 25 C
A
°
T = -55 C
A
°
T = 8 C
A
° 5
T = 12 C
A
° 5
T = 1 0 C
A
° 5
0.55
0.65
0.75
0.85
0.95
0 10 20 30 40
0.50
0.60
0.70
0.80
0.90
1.00
V , DC REVERSE VOLTAGE (V)
R
Fig. 4 Typical Total Capacitance vs. Reverse Voltage
C
, T
O
TAL
C
A
P
A
C
IT
A
N
C
E (
p
F)
T