Diodes BAS116LP3 - Manual (Page 2)

BAS116LP3
Document number: DS35241 Rev. 6 - 2
2 of 4
www.diodes.com
April 2013
© Diodes Incorporated
BAS116LP3
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
85 V
RMS Reverse Voltage V
R(RMS)
60 V
Forward Continuous Current (Note 5) I
FM
215 mA
Repetitive Peak Forward Current I
FRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
250 mW
Thermal Resistance Junction to Ambient Air (Note 6) R
θJA
500 C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
85   V I
R
= 100µA
Forward Voltage V
F

0.75
0.9
1.0
1.15
0.95
1.10
1.20
1.35
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Leakage Current (Note 6) I
R
 
10.0
100
500 nA
V
R
= 75V
V
R
= 1V, T
J
= +150°C
V
R
= 75V, T
J
= +150°C
Total Capacitance C
T
 1.6 3.0 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
 120 3000 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 
Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
0 25 50 75 100 125 150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Figure 1 Power Derating Curve, Total Package
A
50
100
150
200
250
300
I
, I
N
S
TANT
A
NE
OUS F
O
R
W
AR
D C
URRE
NT
(
m
A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
F
0.1
1
10
100
1,000
0 0.4 0.8 1.2 1.6
T = 150ºC
A
T = -55ºC
A
T = 125ºC
A
T = 85ºC
A
T = 25ºC
A