Diodes 1N4448HLP User Manual
Page 3

1N4448HLP
Document number: DS30590 Rev. 12 - 2
3 of 5
March 2012
© Diodes Incorporated
1N4448HLP
0
50
100
0
25
50
75
100
125
150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
A
150
200
250
300
0
I
, I
N
ST
ANT
A
NE
OU
S F
O
RW
AR
D CURRENT
(
m
A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
0
10
20
30
40
50
60
70
80
90 100
0.01
0.1
1
10
100
1,000
10,000
100,000
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
R
EV
E
R
SE
C
U
R
R
E
N
T
(n
A
)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
R
T = -55°C
A
T = 0°C
A
T = 25°C
A
T = 50°C
A
T = 85°C
A
T = 100°C
A
T = 125°C
A
T = 150°C
A
0.01
0
1
2
3
4
5
0.1
1
10
100
1,000
10,000
100,000
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics - Low Bias
R
I
, IN
S
T
AN
T
ANE
O
U
S
R
EV
E
R
SE
C
U
R
R
EN
T
(n
A
)
R
T = -55°C
A
T = 0°C
A
T = 25°C
A
T = 50°C
A
T = 85°C
A
T = 100°C
A
T = 125°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
1
10
100
Fig. 5 Typical Total Capacitance vs. Reverse Voltage
V , DC REVERSE VOLTAGE (V)
R
C
, T
O
T
A
L
CA
P
A
CIT
A
NCE
(
p
F
)
T
f = 1MHz
0
4
6
8
2
10
I , FORWARD CURRENT (mA)
Fig. 6 Typical Reverse Recovery Time vs. Forward Current
F
t,
R
EVE
R
SE
R
E
C
O
VE
R
Y
T
IM
E (
n
S)
rr
0
0.5
1.0
1.5
2.0
2.5