Diodes ZXCT1041 - Manual (Page 3)

ZXCT1041
Issue 2 - January 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics
Test conditions T
A
= 25°C, V
S+
= 10V, V
SENSE
= 100mV
NOTES:
(a) V
SENSE
= "V
S+
" - "V
S-
"
(b) Temperature dependent measurements are extracted from characterisation and simulation results.
Symbol Parameter Conditions Min. Typ. Max. Units
I
Q
Ground pin current 15 35 50 µA
I
S+
V
S+
input current V
SENSE
= 0V 10 17 24 µA
I
S-
V
S-
input current V
SENSE
= 0V 10 17 24 µA
V
OUT
Output voltage
[flag high] V
SENSE
= +150mV 1.55 1.5 1.45 V
V
SENSE
= +100mV 1.02 1 0.98 V
V
SENSE
= +30mV 309 300 291 mV
V
SENSE
= 0V 0 15 mV
[flag low] V
SENSE
= -30mV 285 300 315 mV
V
SENSE
= -100mV 0.95 1 1.05 V
V
SENSE
= -150mV 1.42 1.50 1.58 V
V
OUT
TC V
OUT
variation with
temperature
V
SENSE
= ±100mV 30 ppm/ºC
Gain V
OUT
/V
SENSE
10
Accuracy Total output error
(Gain + offset) V
SENSE
= 100mV ±2 %
Accuracy Total output error
(Gain + offset) V
SENSE
= -100mV ±5 %
BW Bandwidth V
SENSE(DC)
= 100mV
V
SENSE(AC)
= 63mV
PP
300 kHz
CMRR V
S+
common mode
rejection ratio
V
IN
= 2.7 to 20V 60 dB
Flag TP Flag trip point Referred to V
SENSE
-2.5 +2.5 mV
V
FL
Flag low output
voltage I
SINK
= 100
␮A
60 200 mV
I
FH
Flag high leakage
current V
OH
= 5V 1
␮A