Diodes ZXLD1322 - Manual (Page 6)

ZXLD1322
ZXLD1322
Document number: DS32166 Rev. 3 - 2
6 of 17
www.diodes.com
April 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Switching NPN Transistor
Symbol Parameter Condition Min. Typ. Max. Unit
I
SW
Average continuous switch current
(c)
2 A
I
BON(max)
Maximum base current into switch
transistor from internal drive circuit
(d)
2V
IN
<18V BIAS pin at 0V 30 50 70 mA
I
BON
Base current into switch transistor
using external resistor (R
BASE
) from
BIAS pin to ground
R
BIAS
= 1680 Ω 10 mA
V
(BR)CE
Collector-Emitter breakdown voltage I
C
= 10mA 15 V
V
CE(sat)
Collector-Emitter saturation voltage
I
C
= 0.1A, I
B
= 10mA
I
C
= 2A, I
B
= 50mA (e)
50
120
mV
h
FE
Static forward current transfer ratio
I
C
= 200mA, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
209
116
C
OBO
Output capacitance V
CB
= 10V,f = 1MHz 64 pF
t(on) Turn-on time Ic = 0 to I
C
= 2A V
IN
= 10V 30 ns
t(off) Turn-off time I
C
= 2A to Ic < 100 μA 28 ns
High-Side Current Monitor
Symbol Parameter Condition Min. Typ. Max. Unit
V
M_VIN
Supply voltage 2.5 18 V
V
MON
Sense voltage =V
(VIN)
– V
M_VIN
0 100 200 mV
I_
M_VIN
Input current Measured into M_VIN pin 0.08 1 µA
TCO
(MON)
Temperature coefficient
V
MON
=10mV
V
MON
=100mV
370
150
ppm/K
BW Bandwidth
V
MON
=10mV
V
MON
=100mV
350
2.5
KHz
Mhz
Gm
Tran conductance
ΔI
OUT
/ ΔVMON
1 mA/V
A
CC
Accuracy
R
M
= 0.1 Ω
V
MON
= 100mV
-3 3 %
Reference Current Monitor
Symbol Parameter Condition Min. Typ. Max. Unit
V
ADJ
Adjust Voltage 0 500 mV
TCO
(MON)
Temperature coefficient
V
ADJ
= 50mV
V
ADJ
= 500mV
160
200
ppm/K
BW Bandwidth
V
ADJ
= 50mV
V
ADJ
= 500mV
275
3
KHz
Mhz
Gm
Tran conductance
ΔI
OUT
/ ΔV
ADJ
200 µA/V
A
CC
Accuracy V
ADJ
= 500mV -3 3 %
Notes: (c) Measured under pulse conditions.
(d) This current is measured via the collectors and emitters of the switch with these connected to ground (0V)
(e) Measured under pulse conditions. Peak Current = I
C