Electrical characteristics – Diodes TB0640H - TB3500H User Manual
Page 3
TB0640H - TB3500H
Document number: DS30360 Rev. 10 - 2
3 of 6
May 2011
© Diodes Incorporated
TB0640H - TB3500H
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Part Number
Maximum
Rated
Repetitive
Off-State
Voltage
Maximum
Off-State
Leakage
Current @
V
DRM
Maximum
Breakover
Voltage
Maximum
On-State
Voltage
@ I
T
= 1A
Breakover
Current
I
BO
Holding Current
I
H
Typical
Off-State
Capacitance
Marking
Code
V
DRM
(V)
I
DRM
(uA)
V
BO
(V)
V
T
(V)
Min
(mA)
Max
(mA)
Min
(mA)
Max
(mA)
C
O
(pF)
TB0640H 58
5
77 3.5
50
800
150
800 200
T064H
TB0720H 65
5
88 3.5
50
800
150
800 200
T072H
TB0900H 75
5
98 3.5
50
800
150
800 200
T090H
TB1100H 90
5
130 3.5
50
800
150
800 120
T110H
TB1300H 120
5
160 3.5 50
800
150
800 120
T130H
TB1500H 140
5
180 3.5 50
800
150
800 120
T150H
TB1800H 160
5
220 3.5 50
800
150
800 120
T180H
TB2300H 190
5
265 3.5 50
800
150
800 80 T230H
TB2600H 220
5
300 3.5 50
800
150
800 80 T260H
TB3100H 275
5
350 3.5 50
800
150
800 80 T310H
TB3500H 320
5
400 3.5 50
800
150
800 80 T350H
Symbol Parameter
V
DRM
Stand-off Voltage
I
DRM
Leakage current at stand-off voltage
V
BR
Breakdown voltage
I
BR
Breakdown current
V
BO
Breakover voltage
I
BO
Breakover current
I
H
Holding current (Note 5)
V
T
On state voltage
I
PP
Peak pulse current
C
O
Off-state capacitance (Note 6)
Notes: 5.
I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not
exceed 30ms.
6. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP