Zxmhc6a07n8 – Diodes ZXMHC6A07N8 User Manual
Page 7
ZXMHC6A07N8
Issue 1.0 - March 2009 7
© Diodes Incorporated
P-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V
(BR)DSS
-60 V
I
D
= -250
μA, V
GS
= 0V
Zero Gate voltage Drain
current
I
DSS
-0.5
µA
V
DS
= -60V, V
GS
= 0V
Gate-Body leakage
I
GSS
±
100
nA
V
GS
=
±20V, V
DS
= 0V
Gate-Source threshold
voltage
V
GS(th)
-1.0 -3.0
V
I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source
on-state resistance
(a)
R
DS(on)
0.40
0.60
Ω
V
GS
= -10V, I
D
= -0.9A
V
GS
= -4.5V, I
D
= -0.8A
Forward
Transconductance
(a) (c)
g
fs
1.8
S
V
DS
= -15V, I
D
= -0.9A
Dynamic
Capacitance
(c)
Input capacitance
C
iss
141
pF
V
DS
= -50V, V
GS
= 0V
f= 1MHz
Output capacitance
C
oss
13.1 pF
Reverse transfer
capacitance
C
rss
10.8 pF
Switching
(b) (c)
Turn-on-delay time
t
d(on)
1.6 ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1.0A
R
G
≅ 6.0Ω
Rise time
t
r
2.3 ns
Turn-off delay time
t
d(off)
13 ns
Fall time
t
f
5.8 ns
Gate charge
(c)
Total Gate charge
Q
g
5.1 nC
V
DS
= -30V, V
GS
= -10V
I
D
= -0.9A
Gate-Source charge
Q
gs
0.7 nC
Gate-Drain charge
Q
gd
0.7 nC
Source–Drain diode
Diode forward voltage
(a)
V
SD
-0.85
-0.95
V
I
S
= -0.8A, V
GS
= 0V
Reverse recovery time
(c)
t
rr
22.6 ns
I
S
= -0.9A, di/dt= 100A/
μs
Reverse recovery charge
(c)
Q
rr
23.2 nC
NOTES:
(a) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing