Zxmhc6a07n8 – Diodes ZXMHC6A07N8 User Manual
Page 4
ZXMHC6A07N8
Issue 1.0 - March 2009 4
© Diodes Incorporated
N-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V
(BR)DSS
60 V
I
D
= 250
μA, V
GS
= 0V
Zero Gate voltage Drain
current
I
DSS
0.5
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body leakage
I
GSS
±
100
nA
V
GS
=
±20V, V
DS
= 0V
Gate-Source threshold
voltage
V
GS(th)
1.0 3.0
V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source
on-state resistance
(a)
R
DS(on)
0.25
0.35
Ω
V
GS
= 10V, I
D
= 1.8A
V
GS
= 4.5V, I
D
= 1.3A
Forward
Transconductance
(a) (c)
g
fs
2.3
S
V
DS
= 15V, I
D
= 1.8A
Dynamic
Capacitance
(c)
Input capacitance
C
iss
166
pF
V
DS
= 40V, V
GS
= 0V
f= 1MHz
Output capacitance
C
oss
19.5 pF
Reverse transfer
capacitance
C
rss
8.7 pF
Switching
(b) (c)
Turn-on-delay time
t
d(on)
1.8 ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1.8A
R
G
≅ 6.0Ω,
Rise time
t
r
1.4 ns
Turn-off delay time
t
d(off)
4.9 ns
Fall time
t
f
2.0 ns
Gate charge
(c)
Total Gate charge
Q
g
3.2 nC
V
DS
=30V, V
GS
= 10V
I
D
= 1.8A
Gate-Source charge
Q
gs
0.67 nC
Gate-Drain charge
Q
gd
0.82 nC
Source–Drain diode
Diode forward voltage
(a)
V
SD
0.80
0.95
V
I
S
= 0.45A, V
GS
= 0V
Reverse recovery time
(c)
t
rr
20.5 ns
I
S
= 1.8A, di/dt= 100A/
μs
Reverse recovery charge
(c)
Q
rr
21.3 nC
NOTES:
(a) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing