Diodes ZXMHC3A01T8 - Manual (Page 7)

ZXMHC3A01T8
S E M I C O N D U C T O R S
DRAFT ISSUE E - APRIL 2004
7
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage V
(BR)DSS
-30 V I
D
= -250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
-1.0 ␮A V
DS
= -30V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-1.0 -3.0 V I
D
= -250 ␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(1)
R
DS(on)
0.21
0.33
⍀
⍀ V
GS
= -10V, I
D
= -1.4A
V
GS
= -4.5V, I
D
= -1.1A
Forward transconductance
(1) (3)
g
fs
2.5 S V
DS
= -15V, I
D
= -1.4A
DYNAMIC (3)
Input capacitance C
iss
204 pF V
DS
= -15V, V
GS
=0V
f=1MHz Output capacitance C
oss
39.8 pF
Reverse transfer capacitance C
rss
25.8 pF
SWITCHING (2) (3)
Turn-on-delay time t
d(on)
1.2 ns V
DD
= -15V, I
D
= -1A
R
G
≅ 6.0⍀, V
GS
= -10V Rise time t
r
2.3 ns
Turn-off delay time t
d(off)
12.1 ns
Fall time t
f
7.5 ns
Total gate charge 2.6 nC V
DS
= -15V, V
GS
= -5V
I
D
= -1.4A
Total gate charge Q
g
5.2 nC V
DS
= -15V, V
GS
= -10V
I
D
= -1.4A Gate-source charge Q
gs
0.7 nC
Gate drain charge Q
gd
0.9 nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
-0.85 -0.95 V T
j
=25°C, I
S
= -1.1A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
19 ns T
j
=25°C, I
S
= -0.95A,
di/dt=100A/ ␮s Reverse recovery charge
(3)
Q
rr
15 nC
P-channel
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.