Diodes ZXMS6005SG User Manual
Page 3
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
3 of 9
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
LIMIT
UNIT
Continuous Drain-Source Voltage
V
DS
60
V
Drain-Source Voltage for short circuit protection
V
DS(SC)
24 V
Continuous Input Voltage
V
IN
-0.5 ... +6
V
Continuous Input Current
-0.2V
≤V
IN
≤6V
V
IN
<-0.2V or V
IN
>6V
I
IN
No limit
│I
IN
│≤2
mA
Operating Temperature Range
T
j
,
-40 to +150
°C
Storage Temperature Range
T
stg
-55 to +150
°C
Power Dissipation at T
A
=25
°C (a)
Linear Derating Factor
P
D
1.0
8.0
W
mW/
°C
Power Dissipation at T
A
=25
°C (b)
Linear Derating Factor
P
D
1.6
12.8
W
mW/
°C
Pulsed Drain Current @ V
IN
=3.3V I
DM
5
A
Pulsed Drain Current @ V
IN
=5V I
DM
6
A
Continuous Source Current (Body Diode) (a)
I
S
2.5
A
Pulsed Source Current (Body Diode)
I
SM
10
A
Unclamped single pulse inductive energy, Tj=25
°C,
I
D
=0.5A, V
DD
=24V
E
AS
480
mJ
Electrostatic Discharge (Human Body Model)
V
ESD
4000
V
Charged Device Model
V
CDM
1000
V
THERMAL RESISTANCE
PARAMETER SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θJA
125
°C/W
Junction to Ambient (b)
R
θJA
83
°C/W
Junction to Case (c)
R
θJC
39
°C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in
still air conditions. Sink split drain 80% and source 20% to isolate connections.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in
still air conditions. Sink split drain 80% and source 20% to isolate connections.
(c) Thermal resistance between junction and the mounting surfaces of drain and source pins.