Thermal characteristics, Recommended operating conditions – Diodes ZXMS6005DG User Manual
Page 3
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
3 of 9
September 2013
© Diodes Incorporated
ZXMS6005DG
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Power Dissipation at T
A
= +25°C (Note 5)
Linear Derating Factor
P
D
1.3
10.4
W
mW/°C
Power Dissipation at T
A
= +25°C (Note 6)
Linear Derating Factor
P
D
3.0
24
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
96 °C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
42 °C/W
Thermal Resistance, Junction to Case (Note 7)
R
θJC
12 °C/W
Operating Temperature Range
T
J
-40 to +150
°C
Storage Temperature Range
T
STG
-55 to +150
°C
Notes:
5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.
6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
Recommended Operating Conditions
The ZXMS6005DG is optimized for use with μC operating from 3.3V and 5V supplies.
Characteristic Symbol
Min
Max
Unit
Input Voltage Range
V
IN
0 5.5 V
Ambient Temperature Range
T
A
-40 +125 °C
High Level Input Voltage for MOSFET to be on
V
IH
3 5.5 V
Low level input voltage for MOSFET to be off
V
IL
0 0.7 V
Peripheral Supply Voltage (voltage to which load is referred)
V
P
0 24 V