Diodes ZXMS6002G - Manual (Page 6)

ZXMS6002G
Issue 3 - June 2007 6 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static characteristics
Drain-source clamp voltage V
DS(AZ)
60 70 75 V I
D
=10mA
Off state drain current I
DSS
0.1 3 ␮A V
DS
=12V, V
IN
=0V
Off state drain current I
DSS
3 15 ␮A V
DS
=32V, V
IN
=0V
Input threshold voltage (*) V
IN(th)
1 2.1 V V
DS
=V
GS
, I
D
=1mA
Input current I
IN
0.7 1.2 mA V
IN
=+5V
Input current I
IN
1.5 2.7 mA V
IN
=+7V
Input current I
IN
4 7 mA V
IN
=+10V
Static drain-source on-state
resistance R
DS(on)
520 675 m ⍀ V
IN
=5V, I
D
=0.7A
Static drain-source on-state
resistance R
DS(on)
385 500 m
⍀
V
IN
=10V, I
D
=0.7A
Current limit (†) I
D(LIM)
0.7 1.0 1.5 A V
IN
=5V, V
DS
>5V
Current limit (†) I
D(LIM)
1.0 1.8 2.3 A V
IN
=10V, V
DS
>5V
Dynamic characteristics
Turn-off time (V
IN
to 90% I
D
) t
off
13 20
␮s
R
L
=22
⍀, V
IN
=10V to
0V, V
DD
=12V
Slew rate on (70 to 50% V
DD
) -dV
DS
/dt
on
8 20 V/ ␮s R
L
=22 ⍀, V
IN
=0 to
10V, V
DD
=12V
Slew rate off (50 to 70% V
DD
) DV
DS
/dt
on
3.2 10 V/ ␮s R
L
=22 ⍀, V
IN
=10V to
0V, V
DD
=12V
Protection functions (‡)
Required input voltage for
over temperature protection V
PROT
4.5 V
Thermal overload trip
temperature T
JT
150 175 °C
Thermal hysteresis 1 °C
Unclamped single pulse
inductive energy
T
j
=25°C
E
AS
550 mJ I
D(ISO
)=0.7A,
V
DD
=32V
Unclamped single pulse
inductive energy
T
j
=150°C
E
AS
200 mJ I
D(ISO
)=0.7A,
V
DD
=32V