Electrical characteristics p-channel q1 – Diodes ZXMC4559DN8 User Manual
Page 7
ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
7 of 11
March 2014
© Diodes Incorporated
ZXMC4559DN8
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Electrical Characteristics P-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-60
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1.0 µA
V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.0
⎯
⎯
V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
⎯
85
m
Ω
V
GS
= -10V, I
D
= -2.9A
⎯
⎯
125
V
GS
= -4.5V, I
D
= -2.4A
Diode Forward Voltage
V
SD
⎯
-0.85 -0.95 V V
GS
= 0V, I
S
= -3.4A
Forward Transconductance
g
fs
⎯
7.2
⎯
S
V
DS
=-15V,I
D
=-2.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
1021
⎯
pF
V
DS
= -30V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
83.1
⎯
Reverse Transfer Capacitance
C
rss
⎯
56.4
⎯
Total Gate Charge (V
GS
= -5.0V)
Q
g
⎯
12.1
⎯
nC
V
DS
= -30V, I
D
= -2.9A
Total Gate Charge (V
GS
= -10V)
Q
g
⎯
24.2
⎯
Gate-Source Charge
Q
gs
⎯
2.5
⎯
Gate-Drain Charge
Q
gd
⎯
3.7
⎯
Turn-On Delay Time
t
D(on)
⎯
3.5
⎯
nS
V
DD
= -30V, I
D
= -1.0A
V
GS
= -10V, R
G
= 6.0
Ω
Turn-On Rise Time
t
r
⎯
4.1
⎯
Turn-Off Delay Time
t
D(off)
⎯
35
⎯
Turn-Off Fall Time
t
f
⎯
10
⎯
Body Diode Reverse Recovery Time
t
rr
⎯
29.2
⎯
nS
I
S
= -2.0A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
⎯
39.6
⎯
nC
I
S
= -2.0A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.