Diodes ZXMD63C03X - Manual (Page 5)

ZXMD63C03X
ISSUE 2 - SEPTEMBER 2007
5
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
30 V I
D
=250 μA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 μA V
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
= Ϯ 20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
1.0 V I
D
=250 μA, V
DS
= V
GS
Static Drain-Source On-State Resistance (1) R
DS(on)
0.135
0.200 Ω
Ω
V
GS
=10V, I
D
=1.7A
V
GS
=4.5V, I
D
=0.85A
Forward Transconductance (3) g
fs
1.9 S V
DS
=10V,I
D
=0.85A
DYNAMIC (3)
Input Capacitance C
iss
290 pF
V
DS
=25 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
70 pF
Reverse Transfer Capacitance C
rss
20 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
2.5 ns
V
DD
=15V, I
D
=1.7A
R
G
=6.1 Ω, R
D
=8.7 Ω
(Refer to test circuit)
Rise Time t
r
4.1 ns
Turn-Off Delay Time t
d(off)
9.6 ns
Fall Time t
f
4.4 ns
Total Gate Charge Q
g
8 nC
V
DS
=24V,V
GS
=10V,
I
D
=1.7A
(Refer to test circuit)
Gate-Source Charge Q
gs
1.2 nC
Gate Drain Charge Q
gd
2 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.95 V T
j
=25°C, I
S
=1.7A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
16.9 ns T
j
=25°C, I
F
=1.7A,
di/dt= 100A/ μs
Reverse Recovery Charge(3) Q
rr
9.5 nC
NOTES:
(1) Measured under pulsed conditions. Width=300 μs. Duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.