Diodes ZXMC3F31DN8 - Manual (Page 7)

ZXMC3F31DN8
Q2 P-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown
voltage V
(BR)DSS
-30 V I
D
= -250
μA, V
GS
=0V
Zero Gate voltage Drain
current I
DSS -5.0 µA V
DS
=-30V, V
GS
=0V
Gate-Body leakage I
GSS -100 nA V
GS
=
±
20V, V
DS
=0V
Gate-Source threshold
voltage V
GS(th) -1.0 -3.0 V I
D
= -250
μA, V
DS
=V
GS
Static Drain-Source
on-state resistance
(
*
)
R
DS(on) 0.045
0.080
Ω
V
GS
= -10V, I
D
= -5.0A
V
GS
= -4.5V, I
D
= -4.0A
Forward
Transconductance
(
*
) (†)
g
fs 14 S V
DS
= -15V, I
D
= -5.0A
Dynamic
(†)
Input capacitance C
iss
670 pF
Output capacitance C
oss
126 pF
Reverse transfer
capacitance C
rss
70 pF
V
DS
= -15V, V
GS
=0V
f=1MHz
Switching
(‡) (†)
Turn-on-delay time t
d(on)
1.9 ns
Rise time t
r
3 ns
Turn-off delay time t
d(off)
30 ns
Fall time t
f
21 ns
V
DD
= -15V, V
GS
=-10V
I
D
= -1A
R
G
≅ 6.0Ω,
Total Gate charge Q
g
12.7 nC
Gate-Source charge Q
gs
2 nC
Gate-Drain charge Q
gd
2.4 nC
V
DS
= -15V, V
GS
= -10V
I
D
= -5A
Source–Drain diode
Diode forward voltage
(
*
)
V
SD
-0.82 -1.2 V I
S
= -2A,V
GS
=0V
Reverse recovery time
(‡)
t
rr
16.5 ns
Reverse recovery charge
(‡)
Q
rr
11.5 nC
I
S
= -2.1A,di/dt=100A/
μs
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - September 2008 7
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