Zxmc3f31dn8 – Diodes ZXMC3F31DN8 User Manual
Page 2
ZXMC3F31DN8
Absolute maximum ratings
Parameter Symbol
N-
channel
Q1
P-
channel
Q2
Unit
Drain-Source voltage
V
DSS
30 -30 V
Gate-Source voltage
V
GS
±20
±20
V
Continuous Drain current @ V
GS
= 10V; T
A
=25
°C
(b)(d)
@ V
GS
= 10V; T
A
=70
°C
(b)(d)
@ V
GS
= 10V; T
A
=25
°C
(a)(d)
@ V
GS
= 10V; T
A
=25
°C
(a)(e)
@ V
GS
= 10V; T
L
=25
°C
(f)(d)
I
D
7.3
5.9
5.7
6.8
7.8
5.3
4.3
4.1
4.9
5.7
A
Pulsed Drain current
(c)
I
DM
33 23 A
Continuous Source current (Body diode)
(b)(d)
I
S
3.5 3.2 A
Pulsed Source current (Body diode)
(c)(d)
I
SM
33 23 A
Power dissipation at T
A
=25
°C
(a)(d)
Linear derating factor
P
D
1.25
10
W
mW/
°C
Power dissipation at T
A
=25
°C
(a)(e)
Linear derating factor
P
D
1.8
14
W
mW/
°C
Power dissipation at T
A
=25
°C
(b)(d)
Linear derating factor
P
D
2.1
17
W
mW/
°C
Power dissipation at T
L
=25
°C
(f) (d)
Linear derating factor
P
D
2.35
19
W
mW/
°C
Operating and storage temperature range
T
j
, T
stg
-55 to 150
°C
Thermal resistance
Parameter Symbol
Value
Unit
Junction to ambient
(a)(d)
R
θJA
100
°C/W
Junction to ambient
(a)(e)
R
θJA
70
°C/W
Junction to ambient
(b)(d)
R
θJA
60
°C/W
Junction to lead
(f) (d)
R
θJL
53
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t
≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) For a device with one active die.
(e) For a device with two active die running at equal power.
(f)
Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 - September 2008 2
© Diodes Incorporated 2008