Diodes ZXMP2120E5 - Manual (Page 3)

ZXMP2120E5
ISSUE 2 - SEPTEMBER 2006
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-200 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS(th)
-1.5 -3.5 V I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA V
GS
= Ϯ20V, V
DS
=0V
Zero Gate Voltage Drain Current I
DSS
-10
-100
␮A
µA
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current (1) I
D(on)
-300 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State Resistance (1) R
DS(on)
28 Ω V
GS
=-10V, I
D
=-150mA
Forward Transconductance (1)(2) g
fs
50 mS V
DS
=-25V,I
D
=-150mA
DYNAMIC
Input Capacitance (2) C
iss
100 pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz Output Capacitance
(2)
C
oss
25 pF
Reverse Transfer Capacitance
(2)
C
rss
7 pF
SWITCHING
Turn-On Delay Time
(2) (3)
t
d(on)
7 ns
V
DD
=-25V, I
D
=-150mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time
(2) (3)
t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
NOTES:
(1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤ 2%.
(2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator.