Diodes ZXMP2120E5 - Manual

ZXMP2120E5
ISSUE 2 - SEPTEMBER 2006
200V P-CHANNEL ENHANCEMENT MODE MOSFET
1
SUMMARY
V
(BR)DSS =-200V; R DS(ON) = 28 ; I D = -122mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
A 4 pin SOT223 version is also available (ZXMP2120G4).
FEATURES
•
High voltage
•
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
Low threshold
•
SOT23-5 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
•
Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXMP2120E5TA 7 8mm embossed 3,000 units
DEVICE MARKING
•
P120
N/C
N/C
D
G
S
PINOUT - TOP VIEW
SOT23-5