Diodes ZXMP10A17E6 - Manual (Page 2)

ZXMP10A17E6
Document Number DS32027 Rev. 6 - 2
2 of 7
www.diodes.com
January 2014
© Diodes Incorporated
ZXMP10A17E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-100 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current V
GS
= 10V
(Note 6)
I
D
-1.6
A T
A
= +70°C (Note 6) -1.3
(Note 5) -1.3
Pulsed Drain Current V
GS
= 10V (Note 7) I
DM
-7.7 A
Continuous Source Current (Body diode) (Note 6) I
S
-2.1 A
Pulsed Source Current (Body diode) (Note 7) I
SM
-7.7 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 5)
P
D
1.1
8.8
W
mW/ °C
(Note 6)
1.7
13.7
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
113
°C/W
(Note 6) 73
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-100 ⎯ ⎯ V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -0.5 µA V
DS
= -100V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-2 ⎯ -4 V I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8) R
DS(ON)
⎯ ⎯
0.35
Ω
V
GS
= -10V, I
D
= -1.4A
0.45 V
GS
= -6V, I
D
= -1.2A
Forward Transconductance (Notes 8 & 9) g
fs
⎯ 2.8 ⎯ S V
DS
= -15V, I
D
= -1.4A
Diode Forward Voltage (Note 8) V
SD
⎯ -0.85 -0.95 V I
S
= -1.7A, V
GS
= 0V
Reverse recovery time (Note 9) t
rr
33 ⎯ ns
I
S
= -1.5A, di/dt = 100A/µs
Reverse recovery charge (Note 9) Q
rr
⎯ 48 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 424 ⎯ pF
V
DS
= -50V, V
GS
= 0V
F = 1MHz
Output Capacitance C
oss
⎯ 36.6 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 29.8 ⎯ pF
Total Gate Charge (Note 10) Q
g
⎯ 7.1 ⎯ nC V
GS
= -6V
V
DS
= -50V
I
D
= -1.4A
Total Gate Charge (Note 10) Q
g
⎯ 10.7 ⎯ nC
V
GS
= -10V Gate-Source Charge (Note 10) Q
gs
⎯ 1.7 ⎯ nC
Gate-Drain Charge (Note 10) Q
gd
⎯ 3.8 ⎯ nC
Turn-On Delay Time (Note 10) t
D(on)
⎯ 3 ⎯ ns
V
DD
= -50V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6Ω
Turn-On Rise Time (Note 10) t
r
⎯ 3.5 ⎯ ns
Turn-Off Delay Time (Note 10) t
D(off)
⎯ 13.4 ⎯ ns
Turn-Off Fall Time (Note 10) t
f
⎯ 7.2 ⎯ ns
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t ≤ 5 sec.
7. Same as note (5), except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
8. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.