Electrical characteristics, Zxmp10a13f, A product line of diodes incorporated – Diodes ZXMP10A13F User Manual
Page 4
ZXMP10A13F
Document number: DS33596 Rev. 3 - 2
4 of 8
October 2013
© Diodes Incorporated
ZXMP10A13F
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-100
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-1.0 µA
V
DS
= -100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100 nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-2.0
-4.0 V
I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9)
R
DS (on)
1.0
Ω
V
GS
= -10V, I
D
= -0.6A
1.45
V
GS
= -6.0V, I
D
= -0.5A
Forward Transconductance (Notes 9 and 11)
g
fs
1.2
S
V
DS
= -15V, I
D
= -0.6A
Diode Forward Voltage (Note 9)
V
SD
-0.85 -0.95 V T
J
= 25°C, I
S
= -0.75A, V
GS
= 0V
Reverse Recovery Time (Note 11)
t
rr
29
ns
T
J
= 25°C, I
F
= -0.9A,
di/dt = 100A/
s
Reverse Recovery Charge (Note 11)
Q
rr
31
nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
141
pF
V
DS
= -50V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
13.1
Reverse Transfer Capacitance
C
rss
10.8
Turn-On Delay Time (Note 10)
t
D(on)
1.6
ns
V
DD
= -50V, I
D
= -1.0A,
R
G
6.0 V
GS
= -10V
Turn-On Rise Time (Note 10)
t
r
2.1
Turn-Off Delay Time (Note 10)
t
D(off)
5.9
Turn-Off Fall Time (Note 10)
t
f
3.3
Total Gate Charge (Note 10)
Q
g
1.8
nC
V
DS
= -50V, V
GS
= -5.0V,
I
D
= -0.6A
Total Gate Charge (Note 10)
Q
g
3.5
nC
V
DS
= -50V, V
GS
= -10V,
I
D
= -0.6A
Gate-Source Charge (Note 10)
Q
gs
0.6
Gate-Drain Charge (Note 10)
Q
gd
1.6
Notes:
9. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.