Diodes ZVP4424Z - Manual (Page 3)

ZVP4424Z
Document Number DS33410 Rev. 2 - 2
3 of 6
www.diodes.com
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZVP4424Z
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-240 ⎯ ⎯ V I
D
= -1mA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯
-10
-100
μA
μA
V
DS
= -240V, V
GS
= 0V
V
DS
= -190V, V
GS
= 0V, T
A
= +125°C
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±40V, V
DS
= 0V
ON CHARACTERISTICS
On state Drain Current (Note 10)
I
D(on)
-0.75 -1.0 ⎯ A V
DS
= -10V, V
GS
= -10V
Gate Threshold Voltage V
GS(th)
-0.7 -1.4 -2.0 V I
D
= -1mA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10) R
DS(on)
⎯
7.1
8.8 9
11
Ω
V
GS
= -10V, I
D
= -200mA
V
GS
= -3.5V, I
D
= -100mA
Forward Transconductance (Notes 10 & 12) g
fs
125 ⎯ ⎯ mS V
DS
= -10V, I
D
= -200mA
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
⎯ 100 200
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 18 25
Reverse Transfer Capacitance C
rss
⎯ 5 15
Turn-On Delay Time (Note 11) t
d(on)
⎯ 8 15
ns
V
DD
= -50V, I
D
= -250mA
V
GEN
= -10V
Rise Time (Note 11) t
f
⎯ 8 15
Turn-Off Delay Time (Note 11) t
d(off)
⎯ 26 40
Fall Time (Note 11) t
f
⎯ 20 30
Notes: 10. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.