Diodes ZXMP7A17K - Manual (Page 4)

ZXMP7A17K
Issue 2 - August 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
-70 V I
D
= -250
␮A, V
GS
=0V
Zero gate voltage drain
current I
DSS
-1
␮A
V
DS
= -70V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-1.0 V I
D
= -250
␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
␮
s; duty cycle
Յ
2%.
R
DS(on)
0.16
⍀
V
GS
= -10V, I
D
= -2.1A
0.25 ⍀ V
GS
= -4.5V, I
D
= -1.7A
Forward transconductance
(*)(‡)
g fs
4.4 S V
DS
= -15V, I
D
= -2.1A
Dynamic
(‡)
Input capacitance C
iss
635 pF
V
DS
= -40V, V
GS
=0V
f=1MHz
Output capacitance C
oss
52 pF
Reverse transfer capacitance C
rss
42.5 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
2.5 ns
V
DD
= -35V, I
D
= -1A
R
G
≅6.0⍀, V
GS
= -10V
Rise time t
r
3.4 ns
Turn-off delay time t
d(off)
27.9 ns
Fall time t
f
8 ns
Total gate charge Q
g
9.6 nC V
DS
= -35V, V
GS
= -5V
I
D
= -2.1A
Total gate charge Q
g
18 nC
V
DS
= -35V, V
GS
= -10V
I
D
= -2.1A
Gate-source charge Q
gs
1.77 nC
Gate drain charge Q
gd
3.66 nC
Source-drain diode
Diode forward voltage
(*) V
SD
-0.85 -0.95 V T
j
=25°C, I
S
= -2.0A,
V
GS
=0V
Reverse recovery time
(‡) t
rr
29.8 ns T
j
=25°C, I
S
= -2.1A,
di/dt=100A/ ␮s
Reverse recovery charge
(‡) Q
rr
38.5 nC