Diodes ZXMP6A18DN8 - Manual (Page 4)

ZXMP6A18DN8
Document Number DS33592 Rev 2 - 2
4 of 8
www.diodes.com
October 2013
© Diodes Incorporated
ZXMP6A18DN8
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C , unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60   V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  -1 µA V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1   V I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12) R
DS(ON)
 
0.055
Ω
V
GS
= -10V, I
D
= -3.5A
0.08 V
GS
= -4.5V, I
D
= -2.9A
Forward Transconductance (Notes 12 & 14) g
fs
 8.7  S V
DS
= -15V, I
D
= -3.5A
Diode Forward Voltage (Note 12) V
SD
 -0.85 -0.95 V I
S
= -4.2A, V
GS
= 0V, T
J
= +25°C
Reverse Recovery Time (Note 14) t
rr
 37  ns
I
F
= -2.1A, di/dt = 100A/µs, T
J
= +25°C
Reverse Recovery Charge (Note 14) Q
rr
 56  nC
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
C
iss
 1580  pF
V
DS
= -30V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
 160  pF
Reverse Transfer Capacitance C
rss
 140  pF
Total Gate Charge (Note 13) Q
g
 23  nC V
GS
= -5V
V
DS
= -30V
I
D
= -3.5A
Total Gate Charge (Note 13) Q
g
 44  nC
V
GS
= -10V Gate-Source Charge (Note 13) Q
gs
 3.9  nC
Gate-Drain Charge (Note 13) Q
gd
 9.8  nC
Turn-On Delay Time (Note 13) t
D(on)
 4.6  ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
 6.0Ω
Turn-On Rise Time (Note 13) t
r
 5.8  ns
Turn-Off Delay Time (Note 13) t
D(off)
 55  ns
Turn-Off Fall Time (Note 13) t
f
 23  ns
Notes: 12. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%
13. Switching characteristics are independent of operating junction temperatures.
14. For design aid only, not subject to production testing.