Diodes ZXMP6A17GQ - Manual (Page 4)

ZXMP6A17GQ
Document Number DS36686 Rev. 2 - 2
4 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
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ZXMP6A17GQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60   V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  -0.5 µA V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1   V I
D
= -250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10) R
DS(ON)

0.096 0.125
Ω
V
GS
= -10V, I
D
= -2.2A
0.12 0.19 V
GS
= -4.5V, I
D
= -1.8A
Forward Transconductance (Notes 10 & 11) g
fs
 4.7  S V
DS
= -15V, I
D
= -2.2A
Diode Forward Voltage (Note 10) V
SD
 -0.85 -0.95 V I
S
= -2A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 11) t
rr
 25.1  ns I
S
= -1.7A, di/dt = 100A/µs,
T
J
= +25°C Reverse recovery charge (Note 11) Q
rr
 27.2  nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
 637  pF
V
DS
= -30V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
 70  pF
Reverse Transfer Capacitance C
rss
 53  pF
Total Gate Charge (Note 12) Q
g
 9  nC V
GS
= -4.5V
V
DS
= -30V
I
D
= -2.2A
Total Gate Charge (Note 12) Q
g
 17.7  nC
V
GS
= -10V Gate-Source Charge (Note 12) Q
gs
 1.6  nC
Gate-Drain Charge (Note 12) Q
gd
 4.4  nC
Turn-On Delay Time (Note 12) t
D(on)
 2.6  ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
 6Ω
Turn-On Rise Time (Note 12) t
r
 3.4  ns
Turn-Off Delay Time (Note 12) t
D(off)
 26.2  ns
Turn-Off Fall Time (Note 12) t
f
 11.3  ns
Notes: 10. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.