Electrical characteristics – Diodes ZXMP6A17G User Manual
Page 4
ZXMP6A17G
Document Number DS33375 Rev. 6 - 2
4 of 8
February 2014
© Diodes Incorporated
ADVAN
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RM
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ZXMP6A17G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60
⎯
⎯
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-0.5 µA
V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0
⎯
⎯
V
I
D
= -250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9)
R
DS(ON)
⎯
0.096 0.125
Ω
V
GS
= -10V, I
D
= -2.2A
0.120 0.190
V
GS
= -4.5V, I
D
= -1.8A
Forward Transconductance (Notes 9 & 10)
g
fs
⎯
4.7
⎯
S
V
DS
= -15V, I
D
= -2.2A
Diode Forward Voltage (Note 9)
V
SD
⎯
-0.85 -0.95 V I
S
= -2.0A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 10)
t
rr
25.1
⎯
ns
I
S
= -1.7A, di/dt = 100A/µs,
T
J
= +25°C
Reverse recovery charge (Note 10)
Q
rr
⎯
27.2
⎯
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯
637
⎯
pF
V
DS
= -30V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
70.0
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
53.0
⎯
pF
Total Gate Charge (Note 11)
Q
g
⎯
9.0
⎯
nC
V
GS
= -4.5V
V
DS
= -30V
I
D
= -2.2A
Total Gate Charge (Note 11)
Q
g
⎯
17.7
⎯
nC
V
GS
= -10V
Gate-Source Charge (Note 11)
Q
gs
⎯
1.6
⎯
nC
Gate-Drain Charge (Note 11)
Q
gd
⎯
4.4
⎯
nC
Turn-On Delay Time (Note 11)
t
D(on)
⎯
2.6
⎯
ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 11)
t
r
⎯
3.4
⎯
ns
Turn-Off Delay Time (Note 11)
t
D(off)
⎯
26.2
⎯
ns
Turn-Off Fall Time (Note 11)
t
f
⎯
11.3
⎯
ns
Notes:
9. Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.